Superlattice material of quantum cascade lasers was optimized based on growth temperature

Abstract

Infrared imaging, gas sensing, terahertz light source, and clinical diagnostics are all common uses for quantum cascade lasers, particularly in infrared imaging. The precision of the quantum well/barrier thickness is required to be greater, and the growth conditions are more demanding because of the complexity of the band structure epitaxy process. In this research, we investigate the effect of the growth temperature on the growth of GaInAs/AlInAs superlattices using molecular beam epitaxy (MBE). The experimental results indicate that 420°C is the best temperature for growth, and the temperature has less impact on the potential barrier AlInAs material. The AlInAs material's components are comparatively stable. Temperature has a significant impact on the potential well GaInAs layer. A temperature that is too high or too low may modify the epitaxial material components and thickness, which should be optimized while growing the entire quantum cascade lasers core layer structure.