Abstract
Super-junction trench MOSFETs with ion-implanted pcolumns have been fabricated alongside conventional trench MOSFETs and are characterized by inductive switching circuits. The super-junction MOSFETs are designed to be on-state resistance (RDSON) matched with the conventional trench MOSFETs (using different die sizes). Another set of super-junction MOSFETs are fabricated with the same die area and are fitted in identical TO-220 packages. In the case of the RDSON matched devices, switching losses in the super-junction MOSFET were reduced by more than 55% whereas in the area matched devices, conduction losses were reduced by more than 50% in the super-junction MOSFETs. Using the principle of charge balance formed by very simple fabrication techniques, energy conversion efficiency has significantly been improved in power semiconductor devices.
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