Abstract
Common-emitter (CE) configuration of bipolar junction transistors has been used in virtually all amplifications since the invention of transistor, whereas common-base (CB) configuration has been rarely used due to its inferior performance in comparison to CE. For heterojunction bipolar transistors (HBTs) this conviction needs to be changed. We compared the radio-frequency (rf) power handling capability of the HBT between CE and CB configurations and analyzed their amplification mechanisms. It is found that CB HBT significantly outperforms CE HBT under proper bias conditions, revealing the significant superiority of CB to CE configuration of HBTs for rf power amplification.
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