Superior spin transport properties based on VS2 and VCl2 ferromagnetic monolayers

Abstract

Two-dimensional ferromagnetic monolayers have attracted growing interest due to their promising applications in spintronic devices. To explore the potential application of monolayer VS2 and VCl2 in spintronic devices, previously reported ferromagnetic semiconductor and half-metal, respectively, we investigate the spin transport properties of VS2 homo-junction, VCl2 homo-junction, and lateral VS2–VCl2 heterostructure using first-principles combined with non-equilibrium Green's function. We show that monolayer VS2 exhibit superior spin Seebeck effect along an armchair direction, monolayer VCl2 is an excellent platform to realize a spin valve, and the magnetoresistance ratio is up to 1.3 × 104. Moreover, the VS2–VCl2 heterostructure exhibits an excellent spin diode effect. We explain these effects from the calculated spin-dependent band structure and transmission spectrum. The superior spin transport properties make monolayer VS2 and VCl2 promising candidates for spintronic applications.