Abstract
Recently SiC power devices such as SiC-MOSFET have been improved drastically as a next generation power device because of its superior physical property. Although very high carrier density is essential reason for the superior characteristics of that, there is a fundamental problem to realize the predicted performances. One is limit of rating current density by self-heating. The other is destruction by transient self-heating at short circuit event. This paper evaluates performances of SiC-MOSFET compared to Silicon(Si) power devices under the those thermal limitations, and also clarify the substantial requirements to realize the predicted superior performances.
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