Abstract
Metal Oxide Semiconductor Field Effect Transistors (MOSFET) play an important role in electronic industry development. To improve the electrical characteristics of these transistors in this paper, a new structure is proposed to reduce floating body effect, lattice temperature, and short channel effects. The main mechanism for controlling these critical issues is using an embedded tunnel diode. The tunnel diode formed by heavily doped N and P silicon windows which are embedded into the buried oxide layer. The accumulated holes are effectively released by the tunnel current of the tunnel diode. The simulation with ATLAS simulator shows that the proposed structure works properly and the important parameters such as subthreshold slope, off current, voltage gain, and maximum lattice temperature improve in comparison with the conventional nanoscale MOSFET.
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