Abstract

We give a detailed analysis based on Shubnikov-de Haas measurement of the effective mass of 2DEG in an InAs-inserted-channel InAlAs/InGaAs modulation-doped structure. The measured effective mass of the InAs-inserted-channel inverted MD structure was found to be 0.044 m/sub 0/, when n/sub s/=2.08/spl times/10/sup 12/ cm/sup -2/. The results indicate that almost all of the 2DEG forms in the strained InAs quantum well. They show that the InAs-inserted-channel MD structure improves the electron confinement, since the 2DEG is confined in the InAs quantum well with the thickness of 4 nm. Therefore, it is possible to utilize the excellent transport properties of InAs by the InAs-inserted-channel MD structure.

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