Abstract
Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As (x = 0.085–0.15) quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (411)A and (100) GaAs substrates at a temperature (Ts) of 520°C by molecular beam epitaxy (MBE). The interface flatness of the QWs was characterized by photoluminescence (PL) at 4.2 K. PL linewidths of the narrow (411)A QWs (Lw = 2.4 nm) with x = 0.085 and 0.15 were 7.3 meV which is approximately 30–40% smaller than those of the (100) QWs, indicating that extremely flat interfaces over a macroscopic area [(411)A super-flat interfaces] have been realized in the pseudomorphic InxGa1-xAs/Al0.28Ga0.72As QWs (up to x = 0.15) grown on the (411)A GaAs substrates, similar to lattice-matched GaAs/AlxGa1-xAs QWs grown on (411)A GaAs substrate previously reported.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
