Abstract
A new approach to electron beam lithography for device fabrications is described. This technique transfers relief images formed at the superficial layer of a positive resist inversely to the bottom layer of the resist. The technique can drastically improve the resolution and linewidth accuracy of delineated patterns by reducing proximity effects and the influence of incident beam spread. Writing time can also be reduced. 0.2-μm very large scale integration patterns and feature with 250-Å linewidth less than the incident beam size have been successfully produced.
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