Abstract
A method for accomplishing ultrafast cooling is proposed which makes possible supercritical supersaturations of the growth solution in liquid-phase epitaxy. Growth boat designs providing cooling rates as high as are considered. The temperatures of contact, , of a GaAs substrate with a Ga-based solution and of a Si substrate with a Sn-based growth solution, calculated for various substrate and solution temperatures , are in good agreement with experimental values. The maximum attainable supercooling is markedly increased to as high as for the Ga - As system, when the growth solution is subjected to ultrafast cooling. The prospects of using the method for fabricating heterostructures with a large lattice mismatch are discussed.
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