Abstract
A silicon field-effect transistor consisting of a superconducting yttrium barium copper oxide gate, an yttria-stabilized zirconia insulator layer, and p-type silicon substrate with phosphorous-implanted source/drain has been fabricated. The drain current-voltage characteristics at room temperature resemble results measured from a metal-oxide silicon field effect transistor. The key to this similarity lies in the existence of the interfacial silicon oxide layer between the gate insulator/buffer and silicon. >
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