Abstract
An idea for the creation of vortex memories is proposed based on the phase transition in vortex lattice of layered high-temperature superconductor of Bi(2223) system as well as the artificial layer structure. The transition of the vortex lattice is accompanied by a sharp increase of critical current. As a result we have two stable states to perform the memory operations. Memory devices which are proposed, as both the operative and long-term one, must have a write-in speed of the order of 10 −12–10 −14 s, which is essentially more than in other vortex-based memories.
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