Abstract
A newly fabricated three-terminal Josephson junction is coupled with an InAs-inserted-channel InAlAs/InGaAs heterostructure. The two-dimensional electron gas (2DEG) confined in the inserted InAs layer has a high mobility of 73800 cm2/V·s and a high sheet-carrier density of 1.98×1012 cm-2 at 4.2 K. The supercurrent flows through the 2DEG and can be controlled by gate voltage. The critical current and the normal resistance as a function of gate voltage are measured and the sheet-carrier density dependence of the critical current is obtained. The experimental results for this dependence are explained by the superconducting proximity effect theory and by the normal transport of the 2DEG.
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