Abstract
Epitaxial Tl2Ba2CaCu2O8 films were prepared on (11̄02)Al2O3 with (100) CeO2 buffer layers. The Tl2Ba2CaCu2O8 was epitaxially oriented with its c axis perpendicular to the substrate surface and [100] Tl2Ba2CaCu2O8 aligned with [100] CeO2 and [22̄01] Al2O3. The films exhibited Tc of 97–98 K as measured both inductively and by ac magnetic susceptibility. Direct transport critical current density Jc at 75 K was 2.8×105 A/cm2.
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