Preparation of High-T c C-Axis Oriented EBCO thin Films On Si Substrates with Buffer Layers Using DC magnetron sputtering

Abstract

We investigated some buffer materials and those deposition conditions to obtain high- quality c-axis oriented EuBa2Cu3O x (EBCO) films on Si(001) substrates using dc magnetron sputtering. In case of the deposition of CeO2 and Y2O3 on Si, it has been found difficult to grow (001) oriented films because of the existence of SiO x films. Accordingly, (001) oriented YSZ films were deposited as the first buffer layer, and the second layer of CeO2 or Y2O3 which has a small lattice mismatch with EBCO was grown epitaxially on the YSZ layer. Syntheses of the YSZ, CeO2 and Y2O3 buffer layers with (001) orientation and high-quality c-axis EBCO films were examined. The c-axis oriented EBCO films with T ce’s of about 90K were obtained on YSZ(200A)\CeO2(150A) buffer layers at 600°C and on YSZ(200A)\Y2O3(300A) buffer layers at 650°C. The EBCO films on the YSZ\Y2O3 buffer layers were superior to those on the YSZ\CeO2 buffer layers in crystallinity.