Abstract
In-situ phosphorus-doped polysilicon emitters deposited on monocrystalline silicon substrates at a temperature of 627°C and subjected to no additional high-temperature annealing are shown to be capable of giving Gummel numbers G <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E</inf> in excess of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> scm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> . Polysilicon emitters formed in this way have been used to produce superbeta transistors with performance comparable to the record levels recently reported for MIS emitter devices. In particular, common-emitter current gains β in excess of 30000 have been obtained at low V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CB</inf> values.
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