Super-threshold semi analytical channel potential model for DG tunnel FET

Abstract

In this paper, we present a physics based semi-analytical model for channel potential of symmetric double gate tunnel field effect transistor (TFET). The analytical results are compared with TCAD Sentaurus simulated data. We have used a fitting parameter $$\lambda $$?, which represents the screening length (or Debye length) of the device, in this work this fitting parameter is studied with the help of rigorous simulations. This fitting parameter will determine the I---V characteristics of the TFET device, therefore we also tried to show its behavior with changes in applied gate and drain voltages. To show the robustness of our model the results with variations in channel length and film thickness are also presented with simulated results. This model gives the RMS residual error within 0.8---5.0 % and asymptotic standard error for $$\lambda $$? within 0---4.0 % and works well for $$L_{g}\le 150$$Lg≤150 nm and $$T_{si}\ge 8$$Tsi?8 nm.