Abstract
We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. This mode demonstrates a super-linear dependence of the intensity and radiative decay rate on the excitation power. The super-radiant mode is not manifested in the case if only a small number of QWs is excited.
Highlights
We have experimentally demonstrated existence of the collective SR mode originated from the coherent interaction of Bragg multiple quantum wells (BMQW) structure, in which the InAs MLs inside the GaAs matrix serve as quantum wells
The PL properties demonstrated by the BMQW structure make such systems promising for the realisation of novel types of lasers, switches, and other optoelectronic devices
The Bragg structure was designed to satisfy Bragg condition for the wavelength corresponding to the emission line in the individual InAs monolayer quantum well confined inside the GaAs barriers at 5 K
Summary
There are several technological advantages for the structures based on InAs single monolayers compared to MQW fabricated using II-V solid solutions. Holes are localized but the wavefunctions of the holes localized in neighboring InAs MLs overlap, which leads to the appearance of the triplet structure in the eigen-mode spectra. We have experimentally demonstrated existence of the collective SR mode originated from the coherent interaction of BMQW structure, in which the InAs MLs inside the GaAs matrix serve as quantum wells. The SR mode demonstrate super-linear dependence of the PL intensity and decrease of radiative lifetime with increasing excitation power. The PL properties demonstrated by the BMQW structure make such systems promising for the realisation of novel types of lasers, switches, and other optoelectronic devices
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