Abstract
Metalorganic chemical vapor deposition was used to grow single-crystalline tetragonal β-In2S3 films on InP to afford covalently bonded In2S3/InP heterostructures, with the crystal structure of these films identified by high-resolution scanning transmission electron microscopy, X-ray diffraction, and Raman spectroscopy analyses, and the corresponding bandgap energies determined by photoluminescence measurements at room (300 K) and low temperatures (40 K). RT-PL measurements reveal the three peaks spectral emission at 464.3, 574.7, and 648.5 nm associated with luminescence from band-edge and two above conduction band-edge, respectively, although the LT-PL (40K) measurements of β-In2S3 film found two dominant peaks. Moreover, the above films exhibited n-type conductivity, with background electron concentration = 4.9 × 1015 cm–3, electron mobility = 1810.9 cm2 V–1 s–1, and resistivity = 0.704 Ω cm. Thus, single-crystalline β-In2S3 films deposited on InP are promising constituents of high-performance next-generation electronic, optoelectronic, and photovoltaic devices.
Highlights
The above sulfide undergoes a number of thermally induced phase transitions to afford α, β, and γ phases[9] with tetragonal β-In2S3 being the most thermodynamically stable phase at room temperature
Tetragonal β-In2S3 thin films exhibit a wide range of bandgaps (1.64–3.7 eV)[10,11] e.g., a direct bandgap of 1.9 ± 0.3 eV was recently determined by photoluminescence (PL) and photoconductivity measurements.[8,12,13]
scanning transmission electron microscopy (STEM), X-ray diffraction (XRD), and Raman spectroscopy analyses revealed that the prepared films comprised single-crystalline tetragonal β-In2S3, whereas Hall measurements revealed their dramatically improved electron mobility
Summary
The environmentally friendly nature of group IIIA metal chalcogenides together with their suitable bandgaps and superior optical properties/photoconductivities make them promising materials for a range of optoelectronic and photocatalytic applications.[1,2,3,4,5,6,7] In particular, In2S3 is used in the buffer layers of copper indium gallium diselenide solar cells and in the absorber layers of intermediateband solar cells.[2,8] the above sulfide undergoes a number of thermally induced phase transitions to afford α (cubic), β (tetragonal), and γ (hexagonal) phases[9] with tetragonal β-In2S3 being the most thermodynamically stable (and the most studied) phase at room temperature. Sulfurization-induced growth of single-crystalline high-mobility β-In2S3 films on InP
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