Sulfurization Growth of CuInS2 Thin Film Using Ditertiarybutylsulfide as a Less Hazardous Source

Abstract

Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was shown to be a promising, less hazardous alternative source for the sulfurization growth of CuInS2 films. Single-phase, polycrystalline CuInS2 films were formed in only 15 min when the sulfurization temperature was 575 °C. Photoluminescence spectra at a low temperature were dominated by characteristic emission bands at 1.34 and 1.37 eV, indicating that the films are a suitable material as a photoabsorbing layer of CuInS2-based solar cells. These results represent the first step toward realizing a solar cell using a CuInS2 film grown by sulfurization using an organometallic source and conventional, large-scale equipment.