Abstract
The relationship between the specific contact resistance of nonalloyed Pd∕W∕Au ohmic contacts to p-In0.25Ga0.75Sb and premetallization surface preparations is examined. The resistance of ohmic contacts is minimized when p-InGaSb is exposed briefly to a dilute (NH4)2S solution. This treatment minimizes the thickness of any residual oxide or sulfide layer on the semiconductor and avoids excessive etching of the semiconductor, which would make the contact less shallow. A specific contact resistance of 5.9×10−7Ωcm2 is achieved for a Pd∕W∕Au (2∕50∕145nm) contact that consumes no more than 5nm of InGaSb.
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