Successfully Controlled Potential Distribution in a Novel High-Voltage and High-Frequency SOI MESFET

Abstract

Potential distribution of a silicon-on-insulator metal-semiconductor field effect transistor (SOI-MESFET) is successfully controlled by introducing a new structure. The structure we established, utilizes a P-type layer embedded in the drift region. Also, the doping engineering is applied to the proposed structure in order to more enhance the performance superiority of the novel structure called SPL-DE SOI MESFET. The P-type layer and doping engineering control the potential distribution and help the proposed structure to improve the important parameters, such as breakdown voltage, driving current, power gains, oscillation frequency, transconductance, maximum output power density, and gate-drain parasitic capacitance. As a result, the SPL-DE SOI MESFET has superior electrical performances in comparison with the similar device based on the conventional structure thus taking into account the special considerations for the high-voltage and high-frequency applications.