Abstract

A field-programmable gate array (FPGA) using a crystalline oxide semiconductor of c-axis-aligned crystal indium-gallium–zinc oxide (CAAC-IGZO) has been developed, which is capable of subthreshold operation used for energy harvesting. To achieve subthreshold operation, the CAAC-IGZO FPGA has a structure designed as an extension of a boosting pass gate using a CAAC-IGZO FET and employs overdriving of a programmable routing switch and a programmable power switch for power gating (PG). A CAAC-IGZO FET is used to give an ideal floating gate with excellent charge retention. A chip fabricated using a 0.8- $\mu \text{m}$ CAAC-IGZO/0.18- $\mu \text{m}$ CMOS hybrid process achieves subthreshold operation while maintaining the features required for normally off computing proposed in our previous study. Specifically, these features are realized by fine-grained PG for individual programmable logic elements (PLEs), fast configuration switching between contexts, and load/store between a volatile register and a nonvolatile shadow register in the PLEs. The chip operation at a minimum operating voltage of 180 mV with a combinational circuit configuration is demonstrated. With a sequential circuit configuration, the chip operates at a minimum operating voltage of 190 mV with 12.5 kHz, and the minimum power-delay product is 3.40 pJ/operation at 330 mV.

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