Abstract
ABSTRACTA novel subthreshold drain current model has been developed for a cylindrical gate all‐around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectively reduce the short‐channel effects caused by quantum mechanical effects. The drain current equation is solved for all three operating regions to investigate the device switching characteristics and minimize the drain‐induced barrier lowering (DIBL), velocity saturation, mobility degradation, and tunneling. It is understood that the triple material gate structure enhances the transport efficiency of the device. The proposed analytical model is validated by comparison with Sentaurus TCAD numerical simulator results and good agreement is found to be achieved.
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