Subsurface junction field effect transistor

Abstract

A novel bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single boron implant at energies high enough to result in a p-type channel fully embedded in an n-epitaxial background material. The channel is buffered from the Si-SiO 2 interface by a thin n-type region which improves device reproducibility. The structure has been used to make subvolt pinchoff devices especially suitable for micropower low voltage operation.