Abstract
A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.
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