Abstract
A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
