Substrate temperature measurement and control during thermal plasma CVD

Abstract

A technique is proposed for substrate temperature control, with emphasis on temperature uniformity across substrate. The technique includes a substrate holder design employing non-uniform water cooling and a means of substrate attachment featured by controlled thermal contact resistance for a given heat flux distribution from the plasma. The technique was applied to deposit diamond films over a 5 cm diameter area in a DC thermal plasma reactor, and proved adequate. Performance of single-color (0.655 {mu}m) and two-color (2.1 and 2.4 {mu}m) pyrometers were evaluated against DC thermo.] plasma radiation. It was found that both line and continuum emission of plasma jets caused large errors in temperature measurement of the single-color pyrometer. The two-color pyrometer, however, is shown to be less sensitive to the plasma radiation. The way the substrate temperature was controlled and monitored in this study is in general applicable to other TPCVD processes where intense local heating and a bright plasma background exist.