Abstract
Iridium oxide (IrO 2) thin films were deposited on Si (100) substrates by means of pulsed laser deposition technique at various substrate (deposition) temperatures ranging from 250 to 500 °C. Effects of substrate temperature on the crystalline nature, morphology and electrical properties of the deposited films were analyzed by using X-ray diffraction, Raman spectroscopy, Scanning electron microscopy and four-point probe method. It was found that the above properties were strongly dependent on the substrate temperature. The as-deposited films at all substrate temperatures were polycrystalline tetragonal IrO 2 and the preferential growth orientation changed with the substrate temperature. IrO 2 films exhibited fairly homogeneous thickness and good adhesion with the substrate, the average feature size increases with the substrate temperature. The room-temperature resistivity of IrO 2 films decreased with the increase of substrate temperature and the minimum resistivity of (42 ± 6) μΩ cm was obtained at 500 °C. The resistivity of IrO 2 films correlated well with the corresponding film morphology changes.
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