Abstract
The Be transport during MBE growth of GaAs has been studied. The Be surface segregation was clearly separated from the Be diffusion by using misoriented as well as nominal (100) substrates. The Be profiles measured by SIMS showed that the surface segregation was suppressed by the substrate misorientation even when the anomalous diffusion took place. The CAT observation revealed that the Be-induced disordering of superlattices occurred for 6×1019 cm-3 doping. The width of the disordered region was found to depend on the substrate misorientation, which was due to the misorientation dependence of the surface segregation. The step exchange model has been successfully employed to account for these results.
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