Abstract
HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> high-κ/TaN/TiN gate stacks n/p-MOSFETs have been studied. Ultrafast progressive breakdown (PBD) is polarity dependent and is found only in the case of substrate injection in metal gate n/p-MOSFETs. PBD transient of metal gate p-MOSFET is much slower than n-MOSFET in inversion mode stress.
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