Abstract
One of the potential advantages of rapid thermal annealing (RTA) compared to conventional furnace annealing is reduced implant dopant and background impurity diffusion. In this paper, the migration of Cr and Mn during annealing of Cr‐doped semi‐insulating GaAs implanted with 100 keV Si+ ions at a dose of was measured using SIMS. We investigated uncapped RTA at 860° and 930°C for times between 1 and 60s and compared them to capless 30 min furnace anneals. During RTA, Cr migration was severe and showed a strong time‐temperature dependence. Mn migration was undetectable for RTA anneals less than 60s, but dominated the 30 min furnace anneals.
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