Abstract
In order to investigate the substrate effect on the electrochemical properties of thin-film electrode, was deposited onto the alumina, chemically etched-Si and flat-Si substrates. After annealing at in for 30min, the film deposited on the alumina consisted of large particles with several cracks, whereas the film deposited on the flat-Si substrate was composed of very small and uniform particles. The films deposited on the flat-Si showed improved electrochemical properties such as peak potential divergence and rate-capability, over those deposited on the alumina and chemically etched-Si substrate, which can be attributed to the differences of the particle size surface morphology, and the electrical resistance of the current collector.
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