Abstract
White light emission from solid state incandescent light emitting devices made from the Zr-doped HfO2 high-k dielectric stack on silicon wafers of different dopant concentrations have been studied. When the substrate has a high dopant concentration, the high-k dielectric has 1) high defect densities in bulk and interface layers, 2) a small breakdown strength, and 3) a large leakage current. The resulting SSI-LID has: 1) a large number of light emission dots, and 2) a high light emission intensity. The spectrum shape and color of the emitted light are little influenced by the dopant concentration. In summary, the dopant concentration in the substrate affects the formation of nano-resistors and thereof, the light emission characteristics.
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