Abstract
We have studied the ultrafast electronic response of thin NiFe films by femtosecond transient reflectivity measurements. The experiments were performed on films with varying thicknesses, substrates, and pump fluences. It has been observed that for high excitation densities the electron cooling time depends strongly on the nature of the underlying substrate and we attribute our results to transport of hot carriers out of the excited region. In particular, we have observed that for NiFe over NiO, carrier transport should be less important than for NiFe over Si.
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