Abstract
The present study focusses on the fabrication of Metal/MOx/Metal for ReRAM application. We evaluated I-V characteristics using pressure contact with both substrates and found that the silicon substrate has a relatively low switching rate (nearly linear curve), whereas the ITO substrate has a resistance ratio of 10, which gives the optimum switching performance. The identical model was developed in COMSOL software and used for validation, and the metal rich characteristics enhancement is studied. The stoichiometry of metal oxide film has been measured by Resonant Rutherford back Scattering (RRBS) of ZnO coated Au deposited Silicon. X-ray diffraction (XRD) analysis was used to characterize the crystalline structures of Au-deposited ZnO on ITO samples. It was observed that the desired (002)-oriented ZnO wurtzite phase exists. Raman parameters like force constant and bond length is calculated corresponding to the wave number.
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