Abstract
We have prepared thin RuO 2 films by thermal evaporation metal organic chemical vapour deposition on r-plane Al 2 O 3 , MgO, LaAlO 3 and SrTiO 3 single crystal substrates. The films were grown at deposition temperature TD = 500 C, X-ray diffraction analysis show different type of preferred growth, depending on a substrate. Atomic force microscopy revealed typical surface morphology for each type of substrate. Room temperature resistivity of the films on various substrates varied between 30 and 40 μΩcm The best parameters were obtained for epitaxialy grown RuO 2 film on the r-plane cut Al 2 O 3 substrate with a room temperature resistivity about 30 μΩcm and residual resistivity ratio (resistivity ratio between room temperature and 4.2 K) close to30.
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