Abstract
Thin TiO 2 films were grown with a new solid titanium pyrazolylborate precursor by thermal metal organic chemical vapour deposition (MOCVD) in a temperature range of 300–800°C. Previous differential thermal analysis/thermogravimetric measurements have shown that this precursor is suitable for reduced pressure MOCVD systems. The amorphous character of the films deposited on quartz, sapphire, and Si [1 0 0] substrates was proven by X-ray diffraction. Oxygen and ammonia were used as reaction gases.
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