Abstract
This paper investigates the effect of substitutional carbon on generation lifetime in pseudomorphically strained Si1−x−yGexCy (x ∼ 0.1, y < 0.006) layers grown by gas source molecular beam epitaxy (GSMBE). The electrical assessment consists of capacitance–voltage and capacitance transient techniques on metal-oxide-semiconductor (MOS) capacitors based on Si/SiGeC heterostructures. The carrier lifetime study shows microsecond range lifetimes for substitutional carbon contents, [Cs] < 0.5%. The charge confinement in the potential well, formed at the SiGeC/Si heterointerface, is found to have less effect on generation lifetime than the substitutional to interstitial carbon ratio in these alloys. Samples with substitutional carbon concentrations above 0.5% exhibit a sharp decrease of generation lifetime into the nanosecond range, attributed to an increased ratio of interstitial carbon. Si0.8826Ge0.116C0.0014 and Si0.8809Ge0.116C0.0031 layers grown by GSMBE can be used in high-performance heterojunction bipolar transistors (HBTs).
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