Substantiating the mechanisms of electronic and phonon friction in the conjugation of materials of samples (parts) by the methods of solid state physics

Abstract

The article elucidates the essence of the mechanisms of electronic and phonon friction in the coupling of samples (parts) using the methods of solid state physics.
 It is shown that in the triboconjugation of samples made of metallic materials, the flow of fluctuation-electromagnetic and electron-phonon processes should be distinguished. Fluctuation-electromagnetic interactions have long-range effects, and electron-phonon interactions have short-range effects. Based on Lifshitz's fluctuation-electromagnetic theory, the force of friction in moving couplings of metal samples is substantiated, taking into account the frequency ratio in the atomic absorption spectrum and the plasma frequency. A formula for estimating the friction force was obtained, taking into account the dielectric function and the Clausius-Mossotti formula.
 The electronic friction force was estimated using the "jelly" model and the generation of electron-hole pairs in the quantum perturbation theory of solid-state physics.
 The mechanism of electronic friction was discovered based on the phenomenological theory of braking losses of slow ions in solids. The scheme of the model of the electronic friction mechanism is close to the Persson model, which connects the braking force with the electron scattering process. A refined formula for estimating the electronic friction force is proposed.
 The strength of phonon friction is justified on the basis of structural effects that can be induced by the mechanism of breaking adhesive bonds, and perturbation theory. A formula was obtained for estimating the force of phonon friction, taking into account the frequency of phonons, the inverse decay time and the function of the two-dimensional Fourier image of the force of interaction between the atoms of the conjugated surface of the triboelement.
 Cases of static and dynamic phonon friction are considered.
 Electronic and phonon frictional forces are considered at the nanolevel. The Debye low-temperature approximation and refinement of the expressions for estimating the electronic and phonon friction forces are given, taking into account the type of interatomic potential