Abstract
A model for film growth from hyperthermal (\ensuremath{\approxeq}1--${10}^{3}$ eV) species impinging on substrates is proposed. The process includes subsurface implantation, energy loss, preferential displacement of atoms with low displacement energies (${E}_{d}$) leaving high ${E}_{d}$ atoms undisplaced, and sputtering of substrate material. Epitaxial growth and preferred orientation result from the angular dependence of the ${E}_{d}$ and the host mold effect. The model, supported by ion trajectory calculations and experimental data, is applied to diamond film formation from ${\mathrm{C}}^{+}$ ions.
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