Abstract
The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambient atmosphere and annealing in dry oxygen of porous silicon has been studied via PL, PLE, infrared (IR) absorption and X-ray photoelectron emission spectroscopy (XPS). Results indicate a correlation between the suboxide concentration and the PL intensity. These results give further support to a suboxide-related colour centre as the source of the intense red luminescence.
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