Abstract
A self-aligned I/sup 2/L/MTL technology featuring collectors doped from and contacted by polysilicon, self-aIigned collector and base contact edges, and metal-interconnected bases is described. Experimental ring-oscillator circuits designed with 2.5-/spl mu/m design roles and fabricated with this technology exhibit gate delays as small as 0.8 ns at lC = 100 -/spl mu/A for fan-in = 1 and fan-out = 3. Increased wiring flexibility and improved circuit density are inherent advantages of this self-aligned technology.
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