Abstract
Maximum frequency of oscillation (f/sub max/) to cutoff frequency (f/sub T/) ratios up to 2.7 and good microwave characteristics have been achieved by applying an offset self-aligned gate technology to InAlAs/InGaAs HEMTs (high electron mobility transistors) grown by CBE (chemical beam epitaxy). The microwave G/sub m//G/sub ds/ (output conductance) ratio for the devices was 23.5 using L/sub gd/ (gate to drain length)=0.4 mu m while the corresponding f/sub max/ was 251 GHz. The approach described combines the advantages of self-aligned and offset gate technologies. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
