Abstract
A new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at υ ̃ = 11.236 cm -I . The hyperfine interaction parameter | A | ( [ = 3 2 ) is 0.090 ± 0.001 cm -1. The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP.
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