Abstract
A new combination of low/high/low sensitivity tri-layer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to-fabricate submicron T-shaped gate. Gate length as narrow as 0.2 /spl mu/m is achieved. GaAs HEMTs with 0.3 /spl mu/m T-shaped Ti/Pt/Au gate are fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication. >
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