Submicron-sized magnetic tunnel junctions in field programmable logic gate arrays

Abstract

We experimentally demonstrate the feasibility of reprogrammable logic gate arrays with lateral dimensions down to 10×10μm2. The gates are based on magnetic tunnel junctions which are elliptically patterned by e-beam lithography with sizes down to 200×100nm2. The junctions are realized with different tunneling systems and are investigated magnetically and electrically, where the magnetization reversal of the junctions’ soft magnetic layer is done via currents in conducting lines. The switching currents could be reduced by a factor of about 2 by introducing an additional NiFe layer on top of the lines. Thus it is possible to use these gate arrays within a highly integrated environment.