Abstract
Submicron-size Bi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> CaCu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O, (BSCC-0) structures of mesa patterns with dimensions of 0.3 μm x 0.3 μ and line patterns of 0.3 μm width were fabricated on patterned SrTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (001) substrates. These submicron-sized BSCCO structures were grown on patterned structures directly drawn by an focused ion beam (FIB) apparatus with a Ga ion beam accelerated at 30 kV. The c-axis oriented epitaxial BSCCO thin films were prepared by the molecular beam epitaxy (MBE) method on the patterned substrates with a thickness of 70 nm. The fine submicron-size BSCCO structures were obtained from the growth properties of the crystal, which favor the formation of (100), (010), (110) and (11-overbar0) facets. These patterns are free from damages from various etching processes.
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