Abstract
A new electron bias sputtering method capable of filling Al into submicron contact holes without degradation of the quality has been developed for the formation of reliable interconnections of very large scale integrated circuits. The method features intermittent electron irradiation to enhance Al flow during sputtering. The Al film deposited contains little Ar and has low resistivity. Contact holes with 0.4-μm diameter and 0.9-μm depth can be filled with Al.
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