Abstract
A submicron conductor array was fabricated without using lithography by selectively etching a recrystallized Al-Al2Cu eutectic alloy thin film. The 2-μ eutectic films were deposited on glass substrates and directionally solidified with both a quartz iodine lamp and a scanning laser at rates between 0.0016 and 0.14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between 0.5 and 4 μ that was controlled by the solidification rate. An array of submicron Al-rich conductors was fabricated by selectively etching away the Al-Al2Cu phase. At the maximum theoretical solidification rate that produces a two-phase aligned eutectic structure, the width of the Al wires would be 100 Å.
Published Version
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