Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

Abstract

The fabrication, device profiles, and electrical characteristics of epitaxial-base double-poly self-aligned bipolar transistors are presented. The intrinsic-base regions in the present device structures reside above the silicon surface and were formed using a boron-doped low-temperature epitaxially (LTE)-grown Si or Si-Ge layer to achieve a narrow intrinsic-base width ( >